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| SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS(R) Power-Transistor Feature * N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 75 6.5 100 P- TO220 -3-1 V m A * Enhancement mode * Logic Level * 175C operating temperature * Avalanche rated * dv/dt rated Type Package Ordering Code Q67060-S6045 Q67060-S6047 Marking PN08L07 PN08L07 SPP100N08S2L-07 P- TO220 -3-1 SPB100N08S2L-07 P- TO263 -3-2 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25C Value 100 100 Unit A ID Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 810 30 6 20 300 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt IS=100A, VDS=60V, di/dt=200A/s, Tjmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP100N08S2L-07 SPB100N08S2L-07 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 75 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID =250A Zero gate voltage drain current V DS=75V, VGS=0V, Tj=25C V DS=75V, VGS=0V, Tj=125C A 0.01 1 1 1 100 100 nA m 6.4 6.1 5.2 4.9 8.7 8.4 6.8 6.5 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=68A V GS=4.5V, I D=68A, SMD version Drain-source on-state resistance V GS=10V, I D=68A V GS=10V, I D=68A, SMD version 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 138A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPP100N08S2L-07 SPB100N08S2L-07 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =60V, ID =100A, VGS =0 to 10V VDD =60V, ID =100A Symbol Conditions min. Values typ. 154 5360 1080 400 17 41 111 40 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2*ID *RDS(on)max, ID =100A VGS =0V, VDS =25V, f=1MHz 77 - S 7130 pF 1440 600 26 62 165 60 ns VDD =40V, VGS =10V, ID =100A, RG =1.1 - 19 83 185 3.1 25 124 246 - nC V(plateau) VDD =60V, ID =100A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =80A VR =40V, IF =lS , diF /dt=100A/s IS TC=25C - 0.9 95 238 100 400 1.3 120 300 A V ns nC Page 3 2003-05-09 SPP100N08S2L-07 SPB100N08S2L-07 1 Power dissipation Ptot = f (TC) parameter: VGS 4 V 320 SPP100N08S2L-07 2 Drain current ID = f (T C) parameter: VGS 10 V 110 SPP100N08S2L-07 W A 90 240 80 P tot 200 ID 100 120 140 160 C 190 70 60 160 50 120 40 30 20 40 10 0 0 20 40 60 80 0 0 20 40 60 80 80 100 120 140 160 C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 SPP100N08S2L-07 t = 15.0s p 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP100N08S2L-07 K/W A 10 /I D 0 10 = V 2 Z thJC DS 10 -1 ID 100 s R DS (on ) 10 1 ms -2 D = 0.50 0.20 10 -3 1 10 0.10 0.05 0.02 10 -4 single pulse 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-09 SPP100N08S2L-07 SPB100N08S2L-07 5 Typ. output characteristic ID = f (V DS); T j=25C parameter: tp = 80 s 240 SPP100N08S2L-07 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 24 SPP100N08S2L-07 Ptot = 300W i h V [V] GS a b A 200 180 160 2.8 3.0 3.2 3.5 3.8 4.0 4.2 4.5 10.0 d e f g g 20 c d R DS(on) 18 16 14 12 10 8 h ID fe 140 120 100 80 d e f g h i 60 40 20 b c 6 4 VGS [V] = i 2 a d 3.5 e 3.8 f 4.0 g 4.2 h i 4.5 10.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 5 0 40 80 120 160 A 240 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS 2 x ID x RDS(on)max parameter: tp = 80 s 200 8 Typ. forward transconductance g fs = f(I D); T j=25C parameter: g fs 180 A 160 140 120 100 S 140 120 100 80 80 60 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 40 20 0 0 20 40 60 80 100 120 140 V 4.5 VGS g fs ID A 180 ID Page 5 2003-05-09 SPP100N08S2L-07 SPB100N08S2L-07 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 68 A, VGS = 10 V 28 SPP100N08S2L-07 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 2.5 24 22 V V GS(th) R DS(on) 20 18 16 14 12 10 98% 8 6 4 2 0 -60 -20 20 60 100 140 C 200 typ 1.35 mA 1.5 270 A 1 0.5 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 5 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 s 10 3 SPP100N08S2L-07 pF A 10 4 Coss 10 3 IF 10 1 Ciss 10 2 C Crss T j = 25 C typ T j = 175 C typ T j = 25 C (98%) T j = 175 C (98%) 10 2 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 2003-05-09 SPP100N08S2L-07 SPB100N08S2L-07 13 Typ. avalanche energy E AS = f (T j) par.: I D = 80 A, V DD = 25 V, R GS = 25 850 14 Typ. gate charge VGS = f (QGate) parameter: ID = 100 A pulsed 16 SPP100N08S2L-07 mJ V 700 12 600 E AS VGS 10 0,2 VDS max 8 0,8 VDS max 500 400 300 6 200 100 0 25 4 2 45 65 85 105 125 145 C 185 Tj 0 0 40 80 120 160 200 nC 280 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 92 SPP100N08S2L-07 V 88 V(BR)DSS 86 84 82 80 78 76 74 72 70 68 -60 -20 20 60 100 140 C 200 Tj Page 7 2003-05-09 SPP100N08S2L-07 SPB100N08S2L-07 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP100N08S2L-07 and BSPB100N08S2L-07, for simplicity the device is referred to by the term SPP100N08S2L-07 and SPB100N08S2L-07 throughout this documentation. Page 8 2003-05-09 |
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